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Samsung 9100 PRO 4TB M.2 2280 PCIe 5.0 x4 / NVMe 2.0 Internal SSD

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$1,795.50 cheaper than the new price!!

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Product details

Management number 202132540 Release Date 2025/09/19 List Price $1,795.50 Model Number 202132540
Category

The Samsung MZ-VAP4T0B/AM is an internal M.2 2280 solid state drive that places four terabytes of ultra-fast storage directly on the PCIe 5.0 bus. By pairing the NVMe 2.0 protocol with Samsung V-NAND TLC flash and a 4 GB LPDDR4x DRAM cache, it delivers sequential reads up to 14,800 MB/s and writes up to 13,400 MB/s. Random performance reaches 2.2 million IOPS for reads and 2.6 million IOPS for writes, so complex projects load quickly and large game worlds feel seamless.

This level of throughput benefits creators who move multi-stream 4K footage, engineers who compile massive code bases, and data scientists who train AI models on sizable datasets. Competitive gamers also gain an edge because assets stream from the drive with virtually no delay, and PlayStation 5 owners can expand console storage without compromising load times.

Reliability and security come built in. The drive carries a 2,400 TBW endurance rating, uses a power-efficient 5 nm controller, and relies on dynamic thermal control to hold consistent speeds during long transfers. Hardware-based AES 256-bit encryption, along with TCG/Opal 2.0 and Microsoft eDrive support, protects sensitive files without slowing the system.

Installation is straightforward. Slide the drive into any desktop, laptop, or PlayStation 5 that accepts a standard M.2 2280 slot, update to the latest firmware with Samsung Magician, and the storage is ready for action. Whether the system is a creative workstation, a high-end gaming rig, or a portable editing laptop, the 9100 PRO provides the speed headroom needed today and for years to come.

Highlights:
  • PCIe 5.0 x4 interface that communicates through the NVMe 2.0 protocol
  • Sequential performance up to 14,800 MB/s read and 13,400 MB/s write
  • Random performance up to 2,200,000 IOPS read and 2,600,000 IOPS write
  • Samsung V-NAND TLC flash, in-house controller, and 4 GB LPDDR4x DRAM cache
  • AES 256-bit hardware encryption with TCG/Opal 2.0 and Microsoft eDrive support
  • Endurance rating of 2,400 terabytes written (TBW)
  • Power-efficient 5 nm controller combined with advanced thermal control
  • Fits desktops, laptops, and PlayStation 5 systems that accept M.2 2280 drives

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