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Samsung PM9A3 3.84TB U.2 PCIe 4.0 x4 (NVMe) SSD

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Product details

Management number 202132543 Release Date 2025/09/19 List Price $2,222.00 Model Number 202132543
Category

The Samsung MZQL23T8HCLS-00A07 is a U.2 solid state drive with 3.84 TB of V-NAND TLC flash storage that connects through a PCIe 4.0 x4 NVMe interface. It delivers a balance of capacity, speed, and endurance that suits modern data center workloads.

Sequential transfer rates reach up to 6,800 MB/s for reads and 4,000 MB/s for writes, so large databases, media files, or machine learning datasets move quickly. When tasks are driven by small, random operations, the drive handles up to 1,000,000 read IOPS and 180,000 write IOPS, helping virtual machines, analytics engines, and real-time services stay responsive even during peak demand.

Inside, Samsung’s Elpis controller manages traffic across the PCIe 4.0 lanes and coordinates the V-NAND cells for consistent throughput. The drive supports 1.0 drive write per day over five years and carries a two-million-hour MTBF rating, giving administrators clear expectations for long-term reliability. Built-in AES-XTS 256-bit encryption and TCG Opal compliance allow data to remain protected without external hardware.

Typical server racks, hyper-converged nodes, and AI inference boxes benefit from the low 3.5 W idle draw, while active write operations use about 13.5 W, making it easier to plan power budgets. Whether you are refreshing an existing fleet or building out new cloud infrastructure, the drive offers a straightforward way to add fast, secure storage that keeps pace with PCIe 4.0 platforms.

Highlights:
  • 3.84 TB capacity in a U.2 2.5 inch form factor
  • PCIe 4.0 x4 NVMe interface
  • Up to 6,800 MB/s sequential read and 4,000 MB/s sequential write
  • Up to 1,000,000 random read IOPS and 180,000 random write IOPS
  • 1.0 drive write per day endurance rated over five years
  • AES-XTS 256-bit encryption with TCG Opal support
  • Samsung Elpis controller with V-NAND TLC flash
  • Approximately 13.5 W during writes and 3.5 W at idle
  • Two million hours mean time between failures

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